2SB834 Datasheet, PDF (1/1 Pages) Mospec Semiconductor – POWER TRANSISTORS(3.0A,60V,30W)

Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
2SB834 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
1.5 W (Tamb=25℃)
Collector current
I_CM:
-3 A
Collector-base voltage
V_(BR)CBO:
-60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Turn-on Time
Storage Time
Turn-off Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
ton
tstg
toff
Test conditions
Ic=-100µA, IE=0
Ic=-50mA, IB=0
IE=-100µA, IC=0
VCB=-60V, IE=0
VEB=-7V, IC=0
VCE=-5V, IC=-500mA
VCE=-5V, IC=-3A
IC=-3A, IB=-0.3A
VCE=-5V, IC=-500mA
VCE=-5V,I C=-500mA
VCB=-10V, IE=0, f=1MHz
VCC=-30V, Ic=-2A,
IB!=IB2=-0.2A
MIN TYP MAX UNIT
-60
V
-60
V
-7
V
-100 µA
-100 µA
60
200
20
-1
V
-1
V
9
MHz
150
pF
0.4
µs
1.7
µs
0.5
µs
CLASSIFICATION OF h_FE(1)
Rank
Range
O
60-120
Y
100-200