2SB766 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification)

Transys
Electronics
LIMITED
SOT-89 Plastic-Encapsulated Transistors
2SB766 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
500 mW (Tamb=25℃)
Collector current
I_CM:
-1 A
Collector-base voltage
V_(BR)CBO:
-30 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Ic=-10µA, IE=0
Ic=-2mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-10V, IC=-500mA
VCE=-5V, IC=-1A
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-50mA, f=200MHz
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-30
V
-25
V
-5
V
-0.1 µA
-0.1 µA
85
340
50
-0.2 -0.4 V
-0.85 -1.2 V
200
MHz
20
30
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
Q
85-170
AQ
R
120-240
AR
S
170-340
AS