2SB740 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Transys
Electronics
LIMITED
TO-92MOD Plastic-Encapsulated Transistors
2SB740 TRANSISTOR (PNP)
FEATURE
Power dissipation
P_CM:
0.9
W (Tamb=25℃)
Collector current
I_CM:
-1
A
Collector-base voltage
V_(BR)CBO:
-70
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic= -10µA , IE=0
-70
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA , IB=0
-50
Emitter-base breakdown voltage
V(BR)EBO
IE= -10µA, IC=0
-6
Collector cut-off current
ICBO
VCB= -55 V, IE=0
Emitter cut-off current
IEBO
VEB= -6 V, IC=0
DC current gain
hFE
VCE=-2 V, IC= -100mA
100
Collector-emitter saturation voltage
VCEsat
IC= -1A, IB=-100mA
MAX
-1
-0.2
320
-0.6
Transition frequency
fT
VCE=-2V, IC= -10mA
100
Output capacitance
C_ob
VCE=-10V, IE=0, f=1 MHz
45
CLASSIFICATION OF h_FE
Rank
Range
B
100-200
C
160-320
UNIT
V
V
V
µA
µA
V
MHz
pF