2SB709A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transys
Electronics
LIMITED
SOT-23 Plastic-Encapsulated Transistors
2SB709A TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
0.2 W (Tamb=25℃)
Collector current
I_CM:
-0.2 A
Collector-base voltage
V_(BR)CBO:
-45 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
2. 4
1. 3
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
Test conditions
Ic= -10 µA, IE=0
Ic= -2 mA, IB=0
IE= -10 µA, IC=0
VCB= -20 V , IE=0
VCE= -10 V , IB=0
MIN
-45
-45
-7
DC current gain
hFE
VCE= -10V, IC= -2mA
160
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC=-100 mA, IB= -10mA
VCE= -10V, IC= -1mA
fT
60
f=200MHz
MAX UNIT
V
V
V
-0.1 µA
-100 µA
460
-0.5
V
MHz
CLASSIFICATION OF H_FE
Rank
Range
Q
160-260
R
210-340
S
290-460
Marking
BR