2SB649 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Transys
Electronics
LIMITED
TO-126C Plastic-Encapsulated Transistors
2SB649/2SB649A TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
1 W (Tamb=25℃)
Collector current
I_CM:
-1.5 A
Collector-base voltage
V_(BR)CBO : -180 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-126C
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
MIN TYP MAX UNIT
V(BR)CBO
V(BR)CEO
Ic=-1mA, IE=0
Ic=-10mA, IB=0
V(BR)EBO I_E=-1mA, I_C=0
-180
2SB649 -120
2SB649A -160
-5
ICBO V_CB=-160V, I_E=0
IEBO
hFE(1)
VEB=-4V, IC=0
VCE=-5V, IC=-150mA
2SB649 60
2SB649A 60
hFE(2) V_CE=-5V, I_C=-500mA
30
VCE(sat) I_C=-500mA, I_B=-50mA
VBE V_CE=-5V, I_C=-150mA
fT
VCE=-5V, IC=-150mA
Cob V_CB=-10V, I_E=0, f=1MHz
140
27
-10
-10
320
200
-1
-1.5
V
V
V
µA
µA
V
V
MHz
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
B
60-120
C
100-200
D
160-320