2SB647 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Transys
Electronics
LIMITED
TO-92MOD Plastic-Encapsulated Transistors
2SB647/2SB647A TRANSISTOR (PNP)
FEATURE
Power dissipation
P_CM:
0.9 W (Tamb=25℃)
Collector current
I_CM:
-1 A
Collector-base voltage
V_(BR)CBO: 120 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage 2SB647
Emitter-base breakdown voltage
2SB647A
V(BR)CBO
V(BR)CEO
V(BR)EBO
Ic= -10µA , IE=0
IC=-1mA , IB=0
IE= -10µA, IC=0
Collector cut-off current
DC current gain
2SB647
2SB647A
ICBO
hFE(1)*
hFE(2)
VCB= -100 V, IE=0
VCE=-5 V, IC= -150mA
VCE=-5 V, IC= -500mA
MIN
-120
-80
-100
-5
60
60
30
Collector-emitter saturation voltage
VCEsat
IC=-500mA, IB=-50mA
Transition frequency
Output capacitance
fT
VCE=-5V, IC= -150mA
140
C_ob
VCE=-10V, IE=0
f=1 MHz
MAX
-10
320
200
-1
20
UNIT
V
V
V
µA
V
MHz
pF
CLASSIFICATION OF h_FE
Rank
Range
2SB647
2SB647A
B
60-120
60-120
C
100-200
100-200
D
160-320
-