2SB562 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Transys
Electronics
LIMITED
TO-92L Plastic-Encapsulated Transistors
2SB562 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
900 mW (Tamb=25℃)
Collector current
I_CM:
-1 A
Collector-base voltage
V_(BR)CBO:
-25 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92L
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-0.5A
IC=-0.8A, IB=-0.08A
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-25
V
-20
V
-5
V
-1
µA
-1
µA
85
240
-0.5 V
-1
V
350
MHz
38
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
B
85-170
C
120-240