2SB1424 Datasheet, PDF (1/1 Pages) Rohm – Low Vce(sat) Transistor (-20V, -3A)

Transys
Electronics
LIMITED
SOT-89 Plastic-Encapsulate Transistors
2SB1424 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
600 mW (Tamb=25℃)
Collector current
I_CM:
-3 A
Collector-base voltage
V_(BR)CBO:
-20 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
MIN
V(BR)CBO
Ic=-50µA, IE=0
V(BR)CEO
Ic=-1mA, IB=0
V(BR)EBO
IE=-50µA, IC=0
ICBO
VCB=-20V, IE=0
IEBO
VEB=-5V, IC=0
hFE(1)
VCE=-2V, IC=-100mA
VCE(sat)
IC=-2A, IB=-100mA
fT
VCE=-2V, IC=-500mA, f=100MHz
Cob
VCB=-10V, IE=0, f=1MHz
-20
-20
-6
120
TYP
240
35
MAX UNIT
V
V
V
-0.1 µA
-0.1 µA
390
-0.5 V
MHz
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
Q
120-270
AEQ
R
180-390
AER