2SB1322A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency power amplification)

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SB1322A TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
1 W (Tamb=25℃)
Collector current
I_CM:
-1 A
Collector-base voltage
V_(BR)CBO:
-60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-2mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-5V, IC=0
VCE=-10V, IC=-0.5A
VCE=-5V, IC=-1A
IC=-0.5A, IB=-50mA
IC=-0.5A, IB=-50mA
VCE=-10V, IC=-50mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
-5
V
-0.1 µA
-0.1 µA
85
340
50
-0.4 V
-1.2 V
200
MHz
30
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
Q
85-170
R
120-240
S
170-340