2SB1308 Datasheet, PDF (1/1 Pages) Rohm – Power Transistor (-50V, -3A)

Transys
Electronics
LIMITED
SOT-89 Plastic-Encapsulated Transistors
2SB1308 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
0.5
Collector current
I_CM:
-3
Collector-base voltage
V_(BR)CBO:
-30
W (Tamb=25℃)
A
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR1
2
3. EMITTER
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Ic=-50µA , IE=0
IC= -1mA , IB=0
IE=-50µA, IC=0
VCB=-20 V , IE=0
VEB=-5 V , IC=0
-30
V
-20
V
-6
V
-0.5
µA
-0.5
µA
DC current gain
Collector-emitter saturation voltage
Transition frequency
* Measured using pulse current.
CLASSIFICATION OF h_FE
Rank
Range
P
82-180
hFE *
VCEsat *
fT
VCE=-2V, IC= -0.5A
IC=-1.5A, IB= -0.15A
VCE= -6V, IC=-50mA
f =30MHz
82
390
-0.45
V
50
MHz
Q
120-270
R
180-390
Marking
BFP,BFQ,BFR