2SB1261-Z Datasheet, PDF (1/1 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR MP-3

Transys
Electronics
LIMITED
TO-252 Plastic-Encapsulate Transistors
2SB1261-Z TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
2 W (Tamb=25℃)
Collector current
I_CM:
-3 A
Collector-base voltage
V_(BR)CBO:
-60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-252
1. BASE
2. COLLECTOR
3. EMITTER
1 23
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic=-100µA, IE=0
-60
Collector-emitter breakdown voltage
V(BR)CEO
Ic=-1mA, IB=0
-60
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA, IC=0
-7
Collector cut-off current
ICBO
VCB=-60V, IE=0
Emitter cut-off current
IEBO
VEB=-7V, IC=0
hFE(1)
VCE=-2V, IC=-200mA
60
DC current gain
hFE(2)
VCE=-2V, IC=-600mA
100
hFE(3)
VCE=-2V, IC=-2A
Collector-emitter saturation voltage
VCE(sat)
IC=-1.5A, IB=-150mA
Base-emitter saturation voltage
VBE(sat)
IC=-1.5A, IB=-150mA
Transition frequency
fT
VCE=-5V, IC=-1.5A
Collector output capacitance
Cob
VCB=-1.0V, IE=0, f=1MHz
Turn on Time
ton
Switching Time
Storage Time
tstg
VCC=-10V, IC=-1A, IB1=-IB2=-0.1A
Fall Time
tf
TYP
50
120
30
0.5
2.0
0.5
MAX
-10
-10
UNIT
V
V
V
µA
µA
400
-0.3 V
-1.2 V
MHz
pF
µs
CLASSIFICATION OF h_FE(1)
Rank
M
Range
100-200
L
160-320
K
200-400