2SB1260 Datasheet, PDF (1/1 Pages) Rohm – Power Transistor

Transys
Electronics
LIMITED
SOT-89 Plastic-Encapsulated Transistors
2SB1260 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
0.5
Collector current
I_CM:
-1
Collector-base voltage
V_(BR)CBO:
-80
W (Tamb=25℃)
A
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR ₁
3. EMITTER
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO
Ic=-50µA , IE=0
-80
V
V(BR)CEO
IC= -1mA , IB=0
-80
V
V(BR)EBO
IE=-50µA, IC=0
-5
V
ICBO
VCB=-60 V , IE=0
-1
µA
IEBO
VEB=-4 V , IC=0
-1
µA
DC current gain
Collector-emitter saturation voltage
Transition frequency
hFE
VCE=-3V, IC= -0.1A
82
VCE(sat) IC=-500 mA, IB= -50mA
VCE= -5V, IC=- 50mA
fT
80
f = 30MHz
390
-0.4
V
MHz
CLASSIFICATION OF hFE
Rank
Range
P
82-180
Q
120-270
R
180-390
Marking
ZL