2SB1218A Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Transistors
2SB1218A TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
150 mW (Tamb=25℃)
Collector current
I_CM:
-100 mA
Collector-base voltage
V_(BR)CBO:
-45 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-2mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-6V, IC=0
VCE=-10V, IC=-2mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-1mA , f=200MHz
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-45
V
-45
V
-7
V
-0.1 µA
-0.1 µA
160
460
-0.5 V
80
MHz
2.7
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
Q
160-260
BQ
R
210-340
BR
S
290-460
BS