2SB1188 Datasheet, PDF (1/1 Pages) Rohm – Medium power Transistor(-32V, -2A)

Transys
Electronics
LIMITED
SOT-89 Plastic-Encapsulated Transistors
2SB1188 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
0.5
Collector current
I_CM:
-2
Collector-base voltage
W (Tamb=25℃)
A
V_(BR)CBO: -40
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR1
2
3. EMITTER
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-50µA , IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA , IB=0
-32
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-50µA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-20 V , IE=0
-1
µA
Emitter cut-off current
IEBO
VEB=-4 V , IC=0
-1
µA
DC current gain *
hFE
VCE=-3V, IC= -0.5A
82 390
Collector-emitter saturation voltage *
Transition frequency
Output capacitance
* Measured using pulse current.
VCe(sat)
fT
C_ob
IC=-2A, IB= -0.2A
VCE=-5V,
IC=-0.5A ,f=30MHz
VCB=-10V, IE=0 ,f=1MHz
-0.8
V
80
MHz
65
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
p
82-180
BCP
Q
120-270
BCQ
R
180-390
BCR