2SB1185 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
2SB1185 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
2 W (Tamb=25℃)
Collector current
I_CM:
-3 A
Collector-base voltage
V_(BR)CBO:
-60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-50µA, IE=0
Ic=-1mA, IB=0
IE=-50µA, IC=0
VCB=-40V, IE=0
VEB=-4V, IC=0
VCE=-3V, IC=-0.5A
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-5V, IC=-0.5A, f=30MHz
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
5
V
-1
µA
-1
µA
60
320
-1
V
-1.5 V
70
MHz
50
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
D
60-120
E
100-200
F
160-320