2SB1119 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – LF Amp,Electronic Governor Applications

Transys
Electronics
LIMITED
SOT-89 Plastic-Encapsulated Transistors
2SB1119 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM:
500 mW (Tamb=25℃)
Collector current
I_CM:
-1 A
Collector current (Pulse)
ICP:
-2 A
Collector-base voltage
V_(BR)CBO:
-25 V
Operating and storage junction temperature range
T_J,T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(SAT)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-20V, IE=0
VEB=-4V, IC=0
VCE=-2V, IC=-50mA
VCE=-2V, IC=-1A
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-10V, IC=-50mA
VCB=-10V, f=1MHz
MIN TYP MAX UNIT
-25
V
-25
V
-5
V
-0.1 µA
-0.1 µA
100
560
40
-0.7 V
-1.2 v
180
MHz
25
pF
CLASSIFICATION OF h_FE(1)
Rank
R
Range
100-200
Marking
S
T
140-280
200-400
BB
U
280-560