2SA966 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

Transys
Electronics
LIMITED
TO-92MOD Plastic-Encapsulated Transistors
2SA966 TRANSISTOR (PNP)
FEATURE
Power dissipation
P_CM : 0.9 W(Tamb=25℃)
Collector current
I_CM : -1.5 A
Collector-base voltage
V_(BR)CBO : -30 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic= -1mA , IE=0
-30
Collector-emitter breakdown voltage V(BR)CEO
IC= -10 mA , IB=0
-30
Emitter-base breakdown voltage
V(BR)EBO
IE= -1mA, IC=0
-5
Collector cut-off current
ICBO
VCB= -30 V , IE=0
Emitter cut-off current
IEBO
VEB= -5V , IC=0
DC current gain
hFE(1)
VCE=-2 V, IC= -500mA
100
Collector-emitter saturation voltage
VCE(sat)
IC= -1.5 A, IB= -0.03A
Base-emitter voltage
VBE
IC= -500 mA, VCE= -2V
Transition frequency
fT
VCE= -2 V, IC= -500mA
100
MAX
-0.1
-0.1
320
-2
-1
CLASSIFICATION OF hFE₍₁₎
Rank
Range
O
100-200
Y
160-320
UNIT
V
V
V
µA
µA
V
V
MHz