2SA950 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS)

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SA950 TRANSISTOR (PNP)
FEATURE
Power dissipation
P_CM : 0.6 W (Tamb=25℃)
Collector current
I_{CM :} -0.8 A
Collector-base voltage
V_(BR)CBO : -35 V
Operating and storage junction temperature range
T_j, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector Output Capacitance
Symbol
Test conditions
MIN
V(BR)CBO
Ic= -1mA , IE=0
-35
V(BR)CEO
IC= -10 mA , IB=0
-30
V(BR)EBO
IE= -1Ma, IC=0
-5
ICBO
VCB= -35V, IE=0
IEBO
VEB= -5V, IC=0
hFE(1)
VCE=-1V, IC=-100mA
100
hFE(2)
VCE=-1V, IC= -700mA
35
VCE(sat)
IC= -500mA, IB= -20mA
VCB=-10V, IE=0
Cob
f=1MHZ
TYP
19
Transition frequency
fT
VCE=-5V, IC=-10mA,
120
MAX
-0.1
-0.1
320
-0.7
UNIT
V
V
V
µA
µA
V
pF
MHz
CLASSIFICATION OF h_FE(1)
Rank
Range
O
100-200
Y
160-320