2SA844 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SA844 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 0.3 W (Tamb=25℃)
Collector current
I_CM: -0.1 A
Collector-base voltage
V_(BR)CBO : -55 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic= -10µA , IE=0
-55
Collector-emitter breakdown voltage V(BR)CEO
IC= -1mA , IB=0
-55
Emitter-base breakdown voltage
V(BR)EBO
IE= -10µA, IC=0
-5
Collector cut-off current
ICBO
VCB= -18V , IE=0
Emitter cut-off current
IEBO
VEB= -2 V , IC=0
DC current gain
hFE
VCE=-12V, IC= -2mA
160
Collector-emitter saturation voltage
VCE(sat)
IC= -10mA, IB= -1 mA
Base-emitter voltage
VBE(on)
VCE= -12V, IC= -2mA
Transition frequency
fT
VCE=-12V, IC= -2mA
150
TYP
MAX
-0.1
-0.05
800
-0.5
-0.75
UNIT
V
V
V
µA
µA
V
V
MHz
CLASSIFICATION OF hFE
Rank
Range
C
160-320
D
250-500
E
400-800