2SA836 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SA836 TRANSISTOR (PNP)
FEATURES
TO-92
Power dissipation
P_CM : 0.2 W (Tamb=25℃)
Collector current
I_CM: -0.1 A
Collector-base voltage
V_(BR)CBO : -55 V
Operating and storage junction temperature range
1. EMITTER
2. COLLECTOR
3. BASE
T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
123
TYP MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= -10µA , IE=0
-55
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1 mA , IB=0
-55
Emitter-base breakdown voltage
V(BR)EBO
IE= -10µA, IC=0
-5
Collector cut-off current
ICBO
VCB=-18V, IE=0
-0.1
Emitter cut-off current
IEBO
VEB= -2V , IC=0
-0.05
DC current gain
hFE
VCE=-12 V, IC= -2mA
160
500
Collector-emitter saturation voltage
VCEsat
IC= -10mA, IB= -1mA
-0.5
Base-emitter voltage
VBE(ON)
VCE=-12 V, IC= -2mA
-0.75
UNIT
V
V
V
µA
µA
V
V
Transition frequency
fT
VCE=-12 V, IC= -2mA
150
MHz
Output capacitance
Noise figure
CLASSIFICATION OF hFE
Rank
Range
C_ob
VCE=-10V, IE=0,f=1 MHz
VCE=-6V, IC=0.1 mA,
NF
f=1 0Hz, RG=10KΩ
VCE=-6V, IC=0.1 mA,
f=1 kHz, RG=10KΩ
C
160-320
4
pF
5
dB
1
D
250-500