2SA821S Datasheet, PDF (1/1 Pages) Rohm – HIGH VOLTAGE AMPLIFIER TRANSISTOR

Transys
Electronics
LIMITED
TO-92S Plastic-Encapsulated Transistors
2SA821S TRANSISTOR (PNP)
TO-92S
FEATURES
Power dissipation
P_D: 0.25 W (Tamb=25℃)
Collector current
I_CM: -0.03 A
Collector-base voltage
V_(BR)CBO : -210 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCEsat
Ic= -50µA , IE=0
IC= -0.1 mA , IB=0
IE= -50µA, IC=0
VCB=-150V, IE=0
VEB= -4.5 V , IC=0
VCE=-3 V, IC= -5mA
IC= -2mA, IB= -0.2mA
-210
-210
-5
56
MAX
-1
-1
270
-0.6
UNIT
V
V
V
µA
µA
V
Transition frequency
fT
VCE=-5V, IC= -2mA
30
MHz
Output capacitance
C_ob
VCE=-5V, IE=0,f=1 MHz
12
pF
CLASSIFICATION OF hFE
Rank
Range
N
56-120
P
82-180
Q
120-270