2SA812 Datasheet, PDF (1/1 Pages) NEC – AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

Transys
Electronics
LIMITED
SOT-23-3L Plastic-Encapsulated Transistors
2SA812 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 0.2 W (Tamb=25℃)
Collector current
I_CM : -0.1 A
Collector-base voltage
V_(BR)CBO : -60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
Test conditions
Ic=-100µA, IE=0
Ic= -1mA, IB=0
IE= -100µA, IC=0
VCB=- 60 V , IE=0
VEB= -5V , IC=0
VCE=- 6V, IC= -1mA
IC=-100 mA, IB= -10mA
IC=-1mA, VCE=-6V
MIN
-60
-50
-5
90
TYP
Transition frequency
fT
VCE=-6V, IC= -10mA
180
MAX UNIT
V
V
V
-0.1
µA
-0.1
µA
600
-0.3
V
-0.68
V
MHz
CLASSIFICATION OF hFE
Marking
Range
M4
90-180
M5
135-270
M6
200-400
M7
300-600