2SA673 Datasheet, PDF (1/1 Pages) Hitachi Semiconductor – Silicon PNP Epitaxial

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SA673 TRANSISTOR (PNP)
FEATURE
Power dissipation
P_CM : 0.4 W (Tamb=25℃)
Collector current
I_CM: -0.5 A
Collector-base voltage
V_(BR)CBO : -35 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= -10µA , IE=0
-35
Collector-emitter breakdown voltage V(BR)CEO
IC=-1 mA , IB=0
-35
Emitter-base breakdown voltage
V(BR)EBO
IE=-10µA, IC=0
-4
Collector cut-off current
ICBO
VCB= -20 V , IE=0
DC current gain
hFE(1)*
hFE(2)
VCE=-3V, IC= -10mA
60
VCE=-3 V, IC=-500mA
10
Collector-emitter saturation voltage
VCEsat * IC= -150mA, IB=-15mA
Base-emitter voltage
*Measured using pulse
VBE
VCE=-3 V, IC=-10mA
MAX
-0.5
320
-0.6
-0.75
UNIT
V
V
V
µA
V
V
CLASSIFICATION OF h_FE(1)
Rank
B
Range
60-120
C
100-200
D
160-320