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| 2SA608S Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP) | |||
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Transys
Electronics
LIMITED
TO-92S Plastic-Encapsulated Transistors
2SA608S TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 300 mW (Tamb=25â)
Collector current
ICM : -100 mA
Collector-base voltage
V(BR)CBO : -40 V
Operating and storage junction temperature range
TJ, Tstg: -55â to +150â
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100µA, IC=0
VCB=-25V, IE=0
VEB=-4V, IC=0
VCE=-6V, IC=-1mA
IC=-50mA, IB=-5mA
VCE=-6V, IC=-10mA
VCB=-6V, f=1MHz
-40
-30
-5
60
180
7
MAX UNIT
V
V
V
-1
µA
-1
µA
560
-0.5
V
MHz
pF
CLASSIFICATION OF hFE
Rank
D
Range
60-120
E
100-200
F
160-320
G
280-560
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