2SA608N Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Low-Frequency General-Purpose Amplifier Applications

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SA608N TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 0.5 W (Tamb=25℃)
Collector current
I_CM : -0.15 A
Collector-base voltage
V_(BR)CBO : -60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-40V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-1mA
VCE=-6V, IC=-0.1mA
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-10mA
VCB=-6V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
-6
V
-0.1 µA
-0.1 µA
160
560
70
-0.3 V
-1
V
200
MHz
3
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
F
160-320
G
280-560