2SA562 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SA562 TRANSISTOR (PNP)
FEATURE
Power dissipation
P_CM : 0.5 W (Tamb=25℃)
Collector current
I_{CM :} -0.5 A
Collector-base voltage
V _{(BR) CBO}: -35 V
Operating and storage junction temperature range
T_stg: -55℃ to +150℃
T_J : 150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
Test conditions
MIN
V(BR)CBO
Ic= -100µA , IE=0
-35
V(BR)CEO
IC= -1mA , IB=0
-30
V(BR)EBO
IE= -100µA, IC=0
-5
ICBO
VCB=-35V , IE=0
IEBO
VEB= -5V , IC=0
hFE
VCE=-1 V, IC=-100mA
70
VCE(sat)
IC= -100mA, IB= -10 mA
VBE(on)
fT
VCE=- 1V, IC=-100 mA
VCE= -6 V, IC= -20mA
200
F=30MHz
TYP
MAX
-0.1
-0.1
240
-0.25
-1
UNIT
V
V
V
µA
µA
V
V
MHz
CLASSIFICATION OF hFE
Rank
Range
h_FE(1)
O
70-140
Y
120-240