2SA1832 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Transys
Electronics
LIMITED
SOT-523 Plastic-Encapsulated Transistors
2SA1832 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 0.1 W (Tamb=25℃)
Collector current
I_CM : -0.15 A
Collector-base voltage
V_(BR)CBO : -50 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-523
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
I_C=-100µA, I_E=0
I_C=-1mA, I_B=0
I_E=-100µA, I_C=0
V_CB=-50V, I_E=0
V_EB=-5V, I_C=0
V_CE=-6V, I_C=-2mA
I_C=-100mA, I_B=-10mA
V_CE=-10V, I_C=-1mA
V_CB=-10V, I_E=0, f=1MHz
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-0.1 µA
-0.1 µA
120
400
-0.3 V
80
MHz
7
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
Y
120-240
SY
GR
200-400
SG