2SA1700 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-Voltage Driver Applications

Transys
Electronics
LIMITED
TO-251 Plastic-Encapsulated Transistors
2SA1700 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM : 1 W (Tamb=25℃)
Collector current
I_CM : -200 mA
Collector-base voltage
V_(BR)CBO : -400 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-251
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic=-10µA, IE=0
Ic=-1mA, IB=0
IE=-10µA, IC=0
VCB=-300V, IE=0
VEB=-4V, IC=0
VCE=-10V, IC=-50mA
IC=-50mA, IB=-5mA
IC=-50mA, IB=-5mA
VCE=-30V, IC=-10mA
MIN TYP MAX UNIT
-400
V
-400
V
-5
V
-0.1 µA
-0.1 µA
60
200
-0.6 V
-1
V
70
MHz
CLASSIFICATION OF h_FE(1)
Rank
Range
D
60-120
E
100-200