2SA1625 Datasheet, PDF (1/1 Pages) NEC – PNP SILICON TRANSISTOR(general purpose amplifier and high speed switching)

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SA1625 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 750 mW (Tamb=25℃)
Collector current
I_CM : -0.5 A
Collector-base voltage
V_(BR)CBO : -400 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on Time
Storage Time
Fall-Time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Cob
ton
tstg
tf
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100µA, IC=0
VCB=-400V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-50mA
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-10mA
VCB=-10V, IE=0, f=1MHz
VCC=-150V, Ic=-100mA,
IB!=IB2-10mA, RL=1.5KΩ
MIN TYP MAX UNIT
-400
V
-400
V
-7
V
-1
µA
-1
µA
40
200
-1
V
-1.2 V
10
MHz
20 40
pF
1
µs
5
µs
1
µs
CLASSIFICATION OF h_FE(1)
Rank
Range
M
40-80
L
60-120
K
100-200