2SA1611 Datasheet, PDF (1/2 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR

Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Transistors
2SA1611 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 0.15 W (Tamb=25℃)
Collector current
I_CM : -0.1 A
Collector-base voltage
V_(BR)CBO : -60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100µA, IC=0
VCB=-60V,IE=0
VEB=-5V,IC=0
VCE=-6V, IC=-1mA
IC=-100mA, IB=-10mA
VCE=-6V, IC=-1mA
VCE=-6V, IC=-10mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
-5
V
-0.1 µA
-0.1 µA
90
600
-0.3 V
-0.58
-0.68 V
180
MHz
4.5
pF
CLASSIFICATION OF h_FE(1)
Rank
M4
Range
90-180
Marking
M4
M5
135-270
M5
M6
200-400
M6
M7
300-600
M7