2SA1585S Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Transys
Electronics
LIMITED
TO-92S Plastic-Encapsulated Transistors
2SA1585S TRANSISTOR (PNP)
FEATURES
Power dissipation
P_D : 0.4W (Tamb=25℃)
Collector current
I _CM : -2A
Collector-base voltage
V_(BR)CBO : -20V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= -50µA , IE=0
-20
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1 mA , IB=0
-20
Emitter-base breakdown voltage
V(BR)EBO
IE=- 50µA, IC=0
-6
Collector cut-off current
ICBO
VCB=-20V , IE=0
Emitter cut-off current
IEBO
VEB= -5V , IC=0
DC current gain
hFE
VCE=-2 V, IC= -0.1A
120
Collector-emitter saturation voltage
Transition frequency
VCEsat
fT
IC= -2A, IB=-0.1A
VCE=-2V, IC=-0.5A
200
F=100MHz
MAX
-0.1
-0.1
390
-0.5
UNIT
V
V
V
µA
µA
V
MHz
CLASSIFICATION OF h_FE
Rank
Range
Q
120-170
R
180-390