2SA1576A Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Transistors
2SA1576A TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 200 mW (Tamb=25℃)
Collector current
I_CM : -150 mA
Collector-base voltage
V_(BR)CBO : -60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=-50µA, IE=0
Ic=-1mA, IB=0
IE=-50µA, IC=0
VCB=-60V, IE=0
VEB=-6V, IC=0
VCE=-6V, IC=-1mA
IC=-50mA, IB=-5mA
VCE=-12V, IC=-2mA, f=30MHz
VCB=-12V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
-6
V
-0.1 µA
-0.1 µA
120
560
-0.5 V
100
MHz
5
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
Q
120-270
FQ
R
180-390
FR
S
270-560
FS