2SA1357 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (STROBE FLASH, AUDIO POWER AMPLIFIER APPLICATIONS)

Transys
Electronics
LIMITED
TO-126C Plastic-Encapsulated Transistors
2SA1357 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 1.5 W (Tamb=25℃)
Collector current
I_CM : -5 A
Collector-base voltage
V_(BR)CBO : -35 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-126C
1. EMITTER
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-1mA, IE=0
Ic=-10mA, IB=0
IE=-1mA, IC=0
VCB=-35V, IE=0
VEB=-8V, IC=0
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-4A
IC=-4A, IB=-0.1A
VCE=-2V, IC=-4A
VCE=-2V, IC=-0.5A
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-35
V
-20
V
-8
V
-100 µA
-100 µA
100
320
70
-1
V
-1.5 V
170
MHz
62
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
O
100-200
Y
160-320