2SA1309A Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type

Transys
Electronics
LIMITED
TO-92S Plastic-Encapsulated Transistors
2SA1309A TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 0.3 W (Tamb=25℃)
Collector current
I_CM : -0.1 A
Collector-base voltage
V_(BR)CBO : -60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=-10µA, IE=0
Ic=-2mA, IB=0
IE=-10µA, IC=0
VCB=-10V, IE=0
VEB=-10V, IC=0
VCE=-10V, IC=-2mA
IC=-50mA, IB=-5mA
VCE=-10V, IC=-1mA, f=200MHz
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
-7
V
-0.1 µA
-1
µA
160
460
-0.3 V
80
MHz
3.5
pF
CLASSIFICATION OF h_FE(1)
Rank
Q
Range
160-260
Marking
R
210-340
S
290-460