2SA1296 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SA1296 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 0.75 W (Tamb=25℃)
Collector current
I_CM : -2 A
Collector-base voltage
V_(BR)CBO : -20 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-0.1mA, IE=0
Ic=-10mA, IB=0
IE=-0.1mA, IC=0
VCB=-20V, IE=0
VEB=-6V, IC=0
VCE=-2V, IC=-0.1A
VCE=-2V, IC=-2A
IC=-2A, IB=-0.1A
VCE=-2V, IC=-0.1A
VCE=-2V, IC=-0.5A
VCB=-10V, IE=0,f=1MHz
MIN TYP MAX UNIT
-20
V
-20
V
-6
V
-0.1
µA
-0.1
µA
120
400
40
-0.5
V
-0.85 V
120
MHz
40
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
Y
120-240
GR
200-400