2SA1283 Datasheet, PDF (1/1 Pages) Isahaya Electronics Corporation – SILICON PNP 2SA1283

Transys
Electronics
LIMITED
TO-92MOD Plastic-Encapsulated Transistors
2SA1283 TRANSISTOR (PNP)
FEATURE
Power dissipation
P_CM : 0.9 W (Tamb=25℃)
Collector current
I_CM : -1 A
Collector-base voltage
V_(BR)CBO : -60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
Ic= -10µA , IE=0
-60
Collector-emitter breakdown voltage
V(BR)CEO
IC=-2mA , IB=0
-60
Emitter-base breakdown voltage
V(BR)EBO
IE= -10µA, IC=0
-6
Collector cut-off current
ICBO
VCB= -50 V, IE=0
Emitter cut-off current
IEBO
VEB= -4 V, IC=0
DC current gain
hFE
VCE=-4 V, IC= -100mA
55
Collector-emitter saturation voltage
VCEsat
IC= -500 mA, IB=-25 mA
MAX
-0.2
-0.2
300
-0.3
Transition frequency
fT
VCE=-2V, IC= -10mA
50
Output capacitance
C_ob
VCE=-10V, IE=0,f=1 MHz
25
UNIT
V
V
V
µA
µA
V
MHz
pF
CLASSIFICATION OF h_FE
Rank
Range
C
55-110
D
90-180
E
150-300