2SA1235A Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – PNP TRANSISTOR

Transys
Electronics
LIMITED
SOT-23-3L Plastic-Encapsulated Transistors
2SA1235A TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 0.2 W (Tamb=25℃)
Collector current
I_CM : -0.2 A
Collector-base voltage
V_(BR)CBO : -60
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Test conditions
Ic= -100 µA, IE=0
Ic= -0.1 mA, IB=0
IE= -100µA, IC=0
VCB=-60 V , IE=0
VEB= -6V , IC=0
MIN
-60
-50
-6
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
hFE(1)
VCE=-6V, IC= -1mA
150
hFE(2)
VCE=-6V, IC= -0.1mA
90
VCE(sat)
IC=-100 mA, IB= -10mA
VBE(sat)
IC= -100mA, IB= -10mA
MAX UNIT
V
V
V
-0.1 µA
-0.1 µA
500
-0.3
V
-1
V
Transition frequency
fT
VCE=-6V, IC= -10mA
180
MHz
CLASSIFICATION OF hFE₍₁₎
Marking
Range
M·E
150-300
M·F
250-500