2SA1213 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Transys
Electronics
LIMITED
SOT-89 Plastic-Encapsulated Transistors
2SA1213 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 0.5
Collector current
I_CM : -2
Collector-base voltage
V_(BR)CBO : -50
W (Tamb=25℃)
A
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR1
2
3. EMITTER
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-100µA , IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10mA , IB=0
-50
V
Emitter-base breakdown voltage
Collector cut-off current
V(BR)EBO
ICBO
IE=-100µA, IC=0
VCB=-50 V , IE=0
-5
V
-0.1 µA
Emitter cut-off current
IEBO
VEB=-5 V , IC=0
-0.1 µA
DC current gain
Collector-emitter saturation voltage
hFE 1
hFE 2
VCEsat
VCE=-2V, IC= -0.5A
VCE=-2V, IC= -2A
IC=-1A, IB= -0.05A
70
240
20
-0.5
V
Base-emitter saturation voltage
VBEsat
IC=-1A, IB= -0.05A
-1.2
V
Transition frequency
fT
VCE= -2V, IC=-0.5A
100
MHz
CLASSIFICATION OF h_FE
Rank
Range
O
70-140
Y
120-240
Marking
NO,NY