2SA1201 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Transys
Electronics
LIMITED
SOT-89 Plastic-Encapsulated Transistors
2SA1201 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 500 mW (Tamb=25℃)
Collector current
I_CM : -800 mA
Collector-base voltage
V_(BR)CBO : -120 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE
fT
Cob
Test conditions
Ic=-1mA, IE=0
Ic=-10mA, IB=0
IE=-1mA, IC=0
VCB=-120V, IE=0
VEB=-5V, IC=0
VCE=-5V, IC=-100mA
IC=-500mA, IB=-50mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-100mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-120
V
-120
V
-5
V
-0.1 µA
-0.1 µA
80
240
-1
V
-1
V
120
MHz
30
pF
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
O
80-160
DO
Y
120-240
DY