2SA1162 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Transys
Electronics
LIMITED
SOT-23-3L Plastic-Encapsulated Transistors
2SA1162 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 150 mW (Tamb=25℃)
Collector current
I_CM : 150 mA
Collector-base voltage
V_(BR)CBO : -50 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
fT
Cob
Test conditions
Ic=-100µA, IE=0
Ic=-1mA, IB=0
IE=-100µA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-2mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-1mA
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-0.1 µA
-0.1 µA
70
400
-0.3 V
80
MHz
7
pF
Noise figure
NF
VCE=-6V, Ic=0.1mA,
f=1KHZ, Rg=10KΩ
10
dB
CLASSIFICATION OF h_FE(1)
Rank
Range
Marking
O
70-140
SO
Y
120-240
SY
GR
200-400
SG