2SA1160 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Transys
Electronics
LIMITED
TO-92MOD Plastic-Encapsulated Transistors
2SA1160 TRANSISTOR (PNP)
FEATURE
Power dissipation
P_CM : 0.9 W (Tamb=25℃)
Collector current
I_CM: -2A
Collector-base voltage
V_(BR)CBO: -20 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
Collector-base breakdown voltage
V(BR)CBO
Ic= -1mA , IE=0
-20
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA , IB=0
-10
Emitter-base breakdown voltage
V(BR)EBO
IE= -1mA, IC=0
-6
Collector cut-off current
ICBO
VCB= -20 V, IE=0
Emitter cut-off current
IEBO
VEB= -6 V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-1V, IC= -0.5A
140
VCE=-1V, IC= -4A
60
Collector-emitter saturation voltage
VCE(sat)
IC= -2A, IB=-50mA
-0.2
Transition frequency
fT
VCE=-1V, IC= -0.5A
140
Output capacitance
C_ob
VCE=-10V, IE=0,f=1 MHz
50
MAX
-0.1
-0.1
600
UNIT
V
V
V
µA
µA
-0.5
V
MHz
pF
CLASSIFICATION OF h_FE
Rank
Range
A
140-280
B
200-400
C
300-600