2N7002W Datasheet, PDF (1/1 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Transys
Electronics
LIMITED
SOT-323 Plastic-Encapsulated Transistors
2N7002W MOSFET ( N-Channel )
FEATURES
Power dissipation
P_D : 0.2 W (Tamb=25℃)
Collector current
I_D: 115 mA
Collector-base voltage
V_DS: 60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-323
1. GATE
2. SOURCE
3. DRAIN
1. 25¡ À0. 05
2. 30¡ À0. 05
Unit: mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Drain-Source Breakdown Voltage *
V(BR)DSS
VGS=0 V, ID=10 µA
60
Gate-Threshold Voltage*
Vth(GS)
VDS=VGS, ID=250 µA
1
Gate-body Leakage*
lGSS
VDS=0 V, VGS=±20 V
Zero Gate Voltage Drain Current *
VDS=60 V, VGS=0 V
IDSS
VDS=60V,VGS=0V,Tj=125
On-state Drain Current *
ID(ON)
VGS=10 V, VDS=7.5 V
500
Drain-Source On-Resistance *
rDS(0n)
VGS=5 V, ID=50 mA
VGS=10 V, ID=500 mA
Forward Tran conductance *
g FS
VDS=10 V, ID=200 mA
80
Input Capacitance
Ciss
VDS=25 V, VGS=0 V
Output Capacitance
COSS
Reverse Transfer Capacitance
CrSS
f=1 MHz
TYP
70
1.5
1000
3.2
4.4
22
11
2
SWITCHING
Turn-on Time
Turn-off Time
t_d(0n)
V_DD=30 V, R_L=150 Ω
7
I_D=200 mA, V_GEN=10 V
t_d(off)
R_G=25Ω
11
* Pulse test , pulse width≤300µs, duty cycle≤2%.
MAX
2
±10
1
500
7.5
13.5
50
25
5
20
20
UNIT
V
nA
µA
mA
Ω
ms
pF
ns
Marking: K72