2N7002DW Datasheet, PDF (1/1 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Transys
Electronics
LIMITED
SOT-363 Plastic-Encapsulated Transistors
2N7002DW MOSFET (N-Channel)
FEATURES
Power dissipation
P_D : 0.2 W (Tamb=25℃)
Collector current
I_D: 115 mA
Collector-base voltage
V_DS: 60 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Drain-Source Breakdown Voltage *
Gate-Threshold Voltage*
Gate-body Leakage*
V(BR)DSS
Vth(GS)
lGSS
VGS=0 V, ID=10 µA
VDS=VGS, ID=250 µA
VDS=0 V, VGS=±20 V
Zero Gate Voltage Drain Current *
VDS=60 V, VGS=0 V
IDSS
VDS=60V,VGS=0V,Tj=125
On-state Drain Current *
ID(ON)
VGS=10 V, VDS=7.5 V
Drain-Source On-Resistance *
rDS(0n)
VGS=5 V, ID=50 mA
VGS=10 V, ID=500 mA
Forward Tran conductance *
gFS
VDS=10 V, ID=200 mA
Input Capacitance
Ciss
VDS=25 V, VGS=0 V
Output Capacitance
Coss
Reverse Transfer Capacitance
CrSS
f=1 MHz
SWITCHING
Turn-on Time
t_d(0n)
Turn-off Time
t_d(off)
* Pulse test , pulse width≤300µs, duty cycle≤2% .
VDD=30 V, RL=150 Ω
ID=200 mA, VGEN=10 V
RG=25 Ω
Marking: K72
MIN
60
1
TYP
70
1.5
500
1000
3.2
4.4
80
22
11
2
7
11
MAX
2
±10
1
500
7.5
13.5
50
25
5
20
20
UNIT
V
nA
µA
mA
Ω
ms
pF
ns