2N7002 Datasheet, PDF (1/1 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Transys
Electronics
LIMITED
SOT-23 Plastic-Encapsulated Transistors
2N7002 MOSFET (N-Channel)
FEATURES
Power dissipation
P_D : 0.35W (Tamb=25℃)
Drain current
I_D: 250mA
Drain-Source voltage
V_DS: 60V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
SOT-23
1. GATE
2. SOURCE
3. DRAIN
2. 4
1. 3
Unit : mm
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
On-state Drain Current
Drain-Source On-Resistance
Forward Tran conductance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
Vth(GS)
lGSS
IDSS
ID(ON)
rDS(0n)
gts
VSD
Qg
Qgs
Qgd
Ciss
COSS
CrSS
Test conditions
VGS=0 V, ID=10 µA
VDS=VGS, ID=250 µA
VDS=0 V, VGS=15 V
VDS=60 V, VGS=0 V
VDS=60 V, VGS=0 V, Tj=125
VGS=10 V, VDS=7.5 V
VGS=4.5 V, VDS=10 V
VGS=10 V, ID=250 mA
VGS=4.5 V, ID=200 mA
VDS=15 V, ID=200 mA
IS=200 mA, VGS=0 V
VDS=30 V, VGS=10 V, ID=250 mA
VDS=25 V, VGS=0 V, f=1 MHz
MIN
60
1
800
500
TYP
70
1.5
1300
700
1.5
2.0
300
0.85
0.6
0.06
0.06
25
6
1.2
MAX UNIT
V
2.5
10
nA
1
µA
500
mA
3
Ω
4
ms
1.2
V
1.0
nC
pF
SWITCHING TIME
Turn-on Time
Turn-off Time
t_d(0n)
t_r
t_d(off)
V_DD=30 V, R_L=200
I_D=100 mA,V_GEN=10 V
R_G=10 Ω
7.5
20
6
ns
7.5
20