2N6727 Datasheet, PDF (1/1 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2N6727 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 1 W(Tamb=25℃)
Collector current
I_CM : -1.5 A
Collector-base voltage
V_(BR)CBO : -50 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V(BR)CBO
Ic= -1 mA, IE=0
-50
V(BR)CEO
IC= -10 mA , IB=0
-40
V(BR)EBO
IE= -1 mA, IC=0
-5
ICBO
VCB= -50 V, IE=0
ICEO
VCB= -40 V, IB=0
IEBO
VEB= -5 V, IC=0
HFE(1)
VCE=-1 V, IC= -1 A
50
HFE(2)
VCE=-1 V, IC= -10 mA
55
HFE(3)
VCE=-1 V, IC= -100 mA
60
VCE(sat)
IC= -1 A, IB= -100 mA
VBE(on)
VCE= -1 V, IC= -1 A
fT
VCE=-10 V , IC= -50 mA 50
MAX
-0.1
-1
-0.1
250
UNIT
V
V
V
µA
µA
µA
-0.5
V
-1.2
V
MHz