2N6520 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2N6520 TRANSISTOR (PNP)
FEATURES
Power dissipation
P_CM : 0.625 W (Tamb=25℃)
Collector current
I_CM : -0.5
A
Collector-base voltage
V_(BR)CBO : -350
V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
V(BR)CBO
V(BR)CEO^*
Ic= -100 µA , IE=0
IC= -1 mA , IB=0
-350
-350
V(BR)EBO
IE= -10 µA, IC=0
-5
ICBO
VCB= -250 V , IE=0
IEBO
VEB= -4 V , IC=0
VCE=-10 V, IC= -1 mA
20
VCE=-10 V, IC= -10 mA
30
hFE
VCE=-10 V, IC= -30 mA
30
VCE=-10 V, IC= -50 mA
20
VCE=-10 V, IC= -100 mA 15
IC= -10 mA, IB= -1 mA
VCE(sat)
IC= -20 mA, IB= -2 mA
IC= -30 mA, IB= -3 mA
IC= -50 mA, IB= -5 mA
IC= -10 mA, IB= -1 mA
VBE(sat)
IC= -20 mA, IB= -2 mA
IC= -30 mA, IB= -3 mA
VBE(on)
VCE=-10V, IC= -100 mA
f
*
T
VCE=-20 V, IC= -10 mA
40
f =20 MHz
MAX
-0.05
-0.05
UNIT
V
V
V
µA
µA
200
200
-0.3
-0.35
V
-0.5
-1
-0.75
-0.85
V
-0.9
-2
V
200
MHz
* Pulse test, Pulse width≤300µs, Duty cycle≤2%.