2N6517 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2N6517 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM : 625 mW (Tamb=25℃)
Collector current
I_CM : 500 mA
Collector-base voltage
V_(BR)CBO : 350 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)(1)
VCE(sat)(2)
VCE(sat)(3)
VCE(sat)(4)
VBE(sat)(1)
VBE(sat)(2)
VBE(sat)(3)
VBE
fT
Cob
Test conditions
Ic=100 µA, IE=0
Ic=1 mA, IB=0
IE= 10 µA, IC=0
VCB=250 V, IE=0
VEB=5 V, IC=0
VCE=10 V, IC=1 mA
VCE=10 V, IC=10 mA
VCE=10 V, IC=30 mA
VCE=10V, IC=50 mA
VCE=10V, IC=100 mA
IC=10 mA, IB=1 mA
IC=20 mA, IB=2 mA
IC=30 mA, IB=3 mA
IC=50 mA, IB=5 mA
IC=10 mA, IB=1 mA
IC=20 mA, IB=2 mA
IC=30 mA, IB=3 mA
VCE= 20V, IC=10 mA
VCE=10 V, IC=100 mA
VCB=20 V, IE=0, f=1 MHz
MIN TYP MAX UNIT
350
V
350
V
6
V
50 nA
50 nA
20
30
30
200
20
200
15
0.3 V
0.35 V
0.5 V
1
V
0.75 V
0.85 V
0.9 V
40
200 MHz
6
pF