2N5401 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP high-voltage transistor

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2N5401 TRANSISTOR (PNP)
FEATURE
Power dissipation
P_CM : 0.625 W (Tamb=25℃)
Collector current
I_CM : - 0.6 A
Collector-base voltage
V_(BR)CBO : -160 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
f_T
Ic= -100 µA, IE=0
Ic= -1 mA, IB=0
IE= -10 µA, IC=0
VCB= -120 V, IE=0
VEB= -4 V, IC=0
VCE= -5 V, IC=-1 mA
VCE= -5 V, IC= -10 mA
VCE= -5 V, IC=-50 mA
IC= -50 mA, IB= -5 mA
IC= -50 mA, IB= -5 mA
VCE=-5V, IC=-10mA
f =30MHz
-160
-150
-5
80
80
50
100
MAX
-0.1
-0.1
UNIT
V
V
V
µA
µA
250
-0.5
V
-1
V
MHz