2N5172 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2N5172 TRANSISTOR (NPN)
FEATURES
Power dissipation
P_CM : 0.625 W (Tamb=25℃)
Collector current
I_CM : 0.5 A
Collector-base voltage
V_(BR)CBO : 25 V
Operating and storage junction temperature range
T_J, T_stg: -55℃ to +150℃
TO—92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Test conditions
Ic= 10µA, IE=0
Ic= 10 mA, IB=0
IE= 10µA, IC=0
VCB= 25V, IE=0
VEB= 5 V, IC=0
VCE= 10V, IC= 10mA
IC=10mA, IB=1mA
IC=10mA, IB=1mA
MIN TYP
25
25
5
100
MAX
0.1
0.1
500
0.25
1.2
UNIT
V
V
V
µA
µA
V
V