2N3773 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(16A,140V,150W)

Transys
Electronics
LIMITED
NPN SILICON PLANAR POWER TRANSISTOR
2N3773
TO-3
Metal Can Package
Complementary 2N6609
General Purpose Amplifier specially suited for Power Conditioning Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Peak (1)
Base Current Continuous
Peak (1)
Power Dissipation @ T_c=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_CEX
V_EBO
I_C
I_B
P_D
T_j, T_stg
VALUE
160
140
160
7
16
30
4
15
150
0.855
- 65 to +200
THERMAL RESISTANCE
Junction to Case
R_th(j-c)
1.17
(1) Pulse Test: Pulse Width =5ms, Duty Cycle<10%
ELECTRICAL CHARACTERISTICS (T_C=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Sustaing Voltage
Collector Emitter Sustaing Voltage
Collector Emitter Sustaing Voltage
Collector Cut Off Current
Collector Cut Off Current
Collector Cut Off Current
Emitter Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter on Voltage
SYMBOL
V_{CEO (sus)}*
V_{CEX (sus) *}
V_{CER (sus) *}
I_CEO
I_CEX
I_CBO
I_EBO
h_FE*
V_{CE(sat) *}
V_BE(on)*
TEST CONDITION
I_C=0.2A, I_B=0
I_C=0.1A, R_BE=100Ω,V_BE(off)=1.5V
I_C=0.2A, R_BE=100Ω
V_CE=120V, I_B=0
V_CE=140V, V_BE(off)=1.5V
T_c=150ºC
V_CE=140V, V_BE(off)=1.5V
V_CB=140V, I_E=0
V_BE=7V, I_C=0
I_C=8A, V_CE=4V
I_C=16A, V_CE=4V
I_C=8A, I_B=800mA
I_C=16A, I_B=3.2A
I_C=8A, V_CE=4V
MIN
140
160
150
15
5
UNITS
V
V
V
V
A
A
A
A
W
W/ºC
ºC
ºC/W
MAX
10
2.0
UNITS
V
V
V
mA
mA
10
mA
2.0
mA
5.0
mA
60
1.4
V
4.0
V
2.2
V